| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing liquid for metal, capable of efficiently suppressing the generation of dishing at a high polishing speed and suppressing defective due to corrosion of copper, and to provide a polishing method using the same. <P>SOLUTION: The polishing liquid used for chemical mechanical polishing of a copper wiring of a semiconductor device contains (a) a tetrazole compound having substituent at 5-position, (b) a tetrazole compound non-substitued at 5-position, (c) polishing particles and (d) an oxidizer. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
