发明名称 |
Laser Irradiation Method, Laser Irradiation Apparatus, And Semiconductor Device |
摘要 |
An object of the present invention is obtaining a semiconductor film with uniform characteristics by improving irradiation variations of the semiconductor film. The irradiation variations are generated due to scanning while irradiating with a linear laser beam of the pulse emission. At a laser crystallization step of irradiating a semiconductor film with a laser light, a continuous light emission excimer laser emission device is used as a laser light source. For example, in a method of fabricating an active matrix type liquid crystal display device, a continuous light emission excimer laser beam is irradiated to a semiconductor film, which is processed to be a linear shape, while scanning in a vertical direction to the linear direction. Therefore, more uniform crystallization can be performed because irradiation marks can be avoided by a conventional pulse laser.
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申请公布号 |
US2008254598(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20080106643 |
申请日期 |
2008.04.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TANAKA KOICHIRO |
分类号 |
H01L21/268;G02B27/09;H01L21/20;H01L21/77;H01L21/84;H01L27/12;H01S3/13 |
主分类号 |
H01L21/268 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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