| 摘要 |
A semiconductor chip is disclosed, which comprises a chip having an active surface; plural electrode pads disposed on the active surface of the chip; a first passivation layer disposed on the chip, which has openings corresponding to the electrode pads to expose the electrode pads, wherein the first passivation layer is made of a material having high alkali resistance and low coefficient of elasticity; and plural metal bumps disposed in the openings of the first passivation layer. Therefore, as forming the metal bumps by a chemical deposition technique, the damage to the passivation layer can be prevented. Besides, as the semiconductor chip is embedded in a package structure, the problem of delamination occurred due to the mismatch in the coefficients of thermal expansion of the semiconductor chip and the dielectric layers can be avoided. Accordingly, the yield of the package structure having the semiconductor chip embedded therein can be improved.
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