| 摘要 |
Methods for forming a metal interconnection structure in thin-film transistor applications are provided in the present invention. In one embodiment, the method may include providing a substrate into a processing chamber, supplying a first gas mixture into the chamber to deposit a metal layer on the substrate, and supplying a second gas mixture into the chamber to deposit a barrier layer on the metal layer. In another embodiment, a metal interconnection structure may include a substrate, a first barrier layer disposed on the substrate, a metal layer disposed on the substrate in a processing chamber, a second barrier layer disposed on the metal layer formed in the processing chamber a second barrier layer disposed on the metal layer formed in the processing chamber, wherein the first barrier layer, the metal layer and the second barrier layer are configured to form a metal interconnection structure for TFT devices.
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