发明名称 Photovoltaic device and method for manufacturing the same
摘要 A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.
申请公布号 US2008251126(A1) 申请公布日期 2008.10.16
申请号 US20080076690 申请日期 2008.03.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;ARAI YASUYUKI
分类号 H01L31/0264;H01L31/04;H01L31/18 主分类号 H01L31/0264
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