发明名称 |
Photovoltaic device and method for manufacturing the same |
摘要 |
A photovoltaic device uses a single crystal or polycrystalline semiconductor layer which is separated from a single crystal or polycrystalline semiconductor substrate as a photoelectric conversion layer and has a SOI structure in which the semiconductor layer is bonded to a substrate having an insulating surface or an insulating substrate. A single crystal semiconductor layer which is a separated surface layer part of a single crystal semiconductor substrate and is transferred is used as a photoelectric conversion layer and includes an impurity semiconductor layer to which hydrogen or halogen is added on a light incidence surface or on an opposite surface. The semiconductor layer is fixed to a substrate having an insulating surface or an insulating substrate.
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申请公布号 |
US2008251126(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20080076690 |
申请日期 |
2008.03.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;ARAI YASUYUKI |
分类号 |
H01L31/0264;H01L31/04;H01L31/18 |
主分类号 |
H01L31/0264 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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