THREE-DIMENSIONAL STRUCTURE SEMICONDUCTOR DEVICE

摘要

A semiconductor device of three-dimensional structure in which the operating frequency of a chip can be raised while preventing the chip area from increasing. The three-dimensional structure semiconductor device comprises a first integrated circuit including a plurality of areas formed on a first conductor layer and a first wiring layer formed on the first conductor layer, a first insulating layer laminated on the first wiring layer, and a second integrated circuit including a plurality of areas formed on a second conductor layer which is laminated on the first insulating layer, and a second wiring layer formed on the second conductor layer. The first integrated circuit and the second integrated circuit are connected electrically by interconnection penetrating in the laminating direction and at least one of bi-directional communication of data, control signal supply, and clock signal supply between the first integrated circuit and the second integrated circuit is carried out through the penetrating interconnection.