发明名称 PLASMA GENERATOR AND THIN FILM DEPOSITION APPARATUS USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma generator capable of uniformly depositing a film on a substrate of a large area, and a thin film deposition apparatus using the same. <P>SOLUTION: The thin film deposition apparatus for depositing a thin film on a surface of a substrate by using plasma comprises a plurality of cathode units which are arranged opposite to the surface of the substrate and arranged with a predetermined spacing therebetween, at least one anode unit which is arranged opposite to the surface of the substrate and arranged between the cathode units, a substrate supporting member which is arranged on the opposite side via the cathode units, the anode unit and the substrate to generate plasma between the cathode and itself and between the anode and itself, and at least one high frequency power source for supplying the high frequency voltage to the cathode units. The anode unit is arranged forming a pair with at least one cathode unit, and the distance between the cathode unit arranged forming the pair and the anode unit is set so as not to generate the discharge therebetween, and set to be substantially equal to each other. <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008248281(A) 申请公布日期 2008.10.16
申请号 JP20070088751 申请日期 2007.03.29
申请人 MITSUBISHI HEAVY IND LTD 发明人 IYOMASA ATSUHIRO;YAMAKOSHI HIDEO;SATAKE KOJI
分类号 C23C16/509;C23C16/54;H05H1/46 主分类号 C23C16/509
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