| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for stably trimming (writing) a semiconductor device with a polysilicon fuse. SOLUTION: According to the method for trimming the semiconductor device, in the semiconductor device with a polysilicon fuse 101 having a fusion portion 101a, the fusion portion 101a is fused by applying voltage to the polysilicon fuse 101, and at the same time, after predetermined time from the beginning of applying the voltage, application voltage is stopped in a state where the current flowing in the fused polysilicon fuse. COPYRIGHT: (C)2009,JPO&INPIT |
