发明名称 DEPOSITION METHOD, DEPOSITION APPARATUS, AND MEMORY MEDIUM
摘要 PROBLEM TO BE SOLVED: To drastically reduce the consumption of a raw material gas when depositing metal copper on a substrate by chemical reaction of the raw material gas by supplying the metal raw material complex, for example, gaseous copper acetate, obtained by sublimating a solid raw material to the substrate as the raw material gas. SOLUTION: The deposition is performed by supplying the raw material gas obtained by sublimating the solid raw material in a treatment vessel, adsorbing the raw material as a solid on the adsorption and desorption member within the treatment vessel, then stopping the supply and exhaust of the raw material gas and generating as hermetic space in the treatment vessel, then heating the substrate to desorb the raw material from the adsorption and desorption member, and causing the raw material to make chemical reaction on the substrate. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2008248375(A) 申请公布日期 2008.10.16
申请号 JP20070095162 申请日期 2007.03.30
申请人 TOKYO ELECTRON LTD 发明人 ITO HITOSHI
分类号 C23C16/455;H01L21/285 主分类号 C23C16/455
代理机构 代理人
主权项
地址