发明名称 |
Method of fabricating semiconductor device |
摘要 |
There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substrate, at a selected region to sufficient depth. To achieve this the method includes the steps of: providing the semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film, or a SiO<SUB>2 </SUB>film and a thin metal film; and introducing dopant ions.
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申请公布号 |
US2008254603(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20080077825 |
申请日期 |
2008.03.20 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIKAWA KAZUHIRO;HARADA SHIN |
分类号 |
H01L21/266;H01L21/04;H01L21/265 |
主分类号 |
H01L21/266 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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