| 摘要 |
High-adhesive backside metallization may be realized when Ti is deposited with relatively low rf substrate bias power without pre-deposition rf plasma etch of the wafer. Rf induced bias voltage in the range of -50 V to -250 V ensured the best adhesion property of the film stack. Analysis of the interface between Ti layer and Si substrate have shown that Si diffused into Ti layer on a distance up to a depth of 10 nm, while Ti atoms penetrated about 2 nm into the Si. Hence Ti deposition with rf substrate bias enhances intermixing between Ti and Si atoms by low-energy ion bombardment without accumulation of Ar atoms in the interface area as it is inherent to metallization with pre- deposition rf plasma etch. |
