METHOD OF REDUCING THE INTERFACIAL OXIDE THICKNESS

摘要

One inventive aspect is related to a method of minimizing the final thickness of an interfacial oxide layer between a semiconductor material and a high dielectric constant material. The method comprises depositing a covering layer on the high dielectric constant material. The method further comprises removing adsorbed/absorbed water from the high dielectric constant material prior to depositing the covering layer. The removal of adsorbed/absorbed water is preferably done by a degas treatment. The covering layer may be a gate electrode or a spacer dielectric.