| 摘要 |
A resistor structure includes a substrate, a well of a predetermined conductive type positioned in the substrate, a gate structure positioned on the substrate, a first doping region of the predetermined conductive type positioned at a first side of the gate structure, a second doping region of the predetermined conductive type positioned at a second side of the gate structure. The predetermined conductive type can be P type or N type. A fabricating process of the resistor can be integrated into a conventional MOS transistor fabricating process. Moreover, the resistor has better heat dissipation than conventional resistors.
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