| 摘要 |
<p>Disclosed is a vacuum processing apparatus wherein a conductive partition unit having a plurality of through holes is provided within a vacuum processing chamber, thereby dividing the internal space of the vacuum processing chamber into a plasma-generating space wherein a high-frequency electrode is arranged so as to serve as a counter electrode for the partition unit and a substrate processing space wherein a substrate is placed. This vacuum processing apparatus comprises, on a side wall of the vacuum processing chamber, a gas reservoir unit communicated with the plasma-generating space and a gas supply system connected with the gas reservoir unit for introducing a gas into the gas reservoir unit.</p> |
