SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to prevent hydrogen atoms or hydrogen ions from penetrating an oxide layer by forming an aluminum oxide layer and an etch stop layer on the oxide layer of the semiconductor device. An aluminum oxide layer is formed on an oxide layer(110) formed on a substrate(100). An etch stop layer(130) is formed on the aluminum oxide layer. A dielectric is formed on the etch stop layer. A part of the dielectric is etched by using the etch stop layer as a stop point. The dielectric is etched to remove the exposed etch stop layer and the aluminum oxide layer. The etch stop layer includes silicon nitride. A thickness of the etch stop layer is from 100 Å to 200 Å. A thickness of the aluminum oxide layer is from 50 Å to 200 Å. After the aluminum oxide layer is formed, a CVD(Chemical Vapor Deposition) oxide layer is formed on the aluminum oxide layer. Before the aluminum oxide layer is formed, a gate electrode is formed on the oxide layer.