| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a light-receiving element, capable of preventing a second conductivity-type impurity from diffusing on a first semiconductor layer of a light-receiving section. <P>SOLUTION: In a laminate in which a first semiconductor layer (6) made of a first conductivity-type InP and a second semiconductor layer (7) made of a second conductivity-type InP are sequentially formed on a semiconductor substrate (1), the manufacturing method of a semiconductor device (100) includes a step of forming a diffusion suppressing layer (8) containing at least any one of InGaAs and InGaAsP on at least one part of a light-receiving region (7a) of the second semiconductor layer, a step of forming an insulating layer (9) on the diffusion suppressing layer, and a step of thermally diffusing a second conductivity-type impurity into one part of the first semiconductor layer by executing thermal diffusion in an atmosphere containing the second conductivity-type impurity while using the diffusion suppressing layer and the insulating layer as thermal diffusion masks. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
