| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a multijunction photoelectric converter which prevents the degradation by light and has a high conversion efficiency. <P>SOLUTION: In the multijunction photoelectric converter in which a plurality of photoelectric conversion layers are stacked, each layer has a pin junction, obtained by stacking a p-type silicon semiconductor layer, an i-type silicon semiconductor layer and an n-type silicon semiconductor layer, a photoelectric conversion layer on the incident portion installed on the light incident side has one selected from among the group consisting of amorphous silicon, amorphous silicon carbon and amorphous silicon germanium; and a photoelectric conversion layer on the bottom installed on the opposite side to the light incident side having a microcrystalline silicon germanium. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
