| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel apparatus and method for vapor phase deposition in which a film to be formed on a semiconductor wafer is made approximately uniform and variations in the impurity concentration is also reduced. SOLUTION: In a vapor phase deposition apparatus, a wafer 102 placed on a support table 101 is housed within a chamber 103, and a first channel 121 which supplies gas for forming a film on the wafer 102 and a second channel 131 which supplies gas for controlling the concentration of an impurity in the film formed on the wafer 102, are connected to the chamber. In the vapor phase deposition apparatus, the first channel is branched into two paths 1a and 1b, and the second channel is branched into two paths 2a and 2b so as to supply a gas individually to a peripheral portion and to a central portion on the wafer 102. COPYRIGHT: (C)2009,JPO&INPIT
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