Verfahren zur thermischen Behandlung einer Siliciue

摘要

A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequalityis satisfied, where [Oi] is the oxygen concentration in the silicon wafer [Oi](T) is the limit solubility of oxygen in silicon at a temperature T, sigmaSiO2 is the surface energy of silicon dioxide Omega is the volume of a precipitated oxygen atom, r is the mean COP radius and k is the Boltzmann constant. A silicon wafer made by the above process.