Transistor i.e. recessed channel array transistor, for use in memory i.e. dynamic RAM, of integrated circuit, has gate electrode arranged in gate trench, and carbon material corresponding to layer over gate dielectric layer

摘要

The transistor (20) has a gate electrode (23), which is arranged in a gate trench (27) that is formed in a semiconductor substrate (1), and a conductive carbon material (25) that corresponds to a layer over a gate dielectric layer. A gate electrode includes a conductive filling. The carbon material partially fills the gate trench. An upper side of the carbon material is arranged underneath a main surface (10) of the substrate. An isolating layer (26) is arranged over the surface of the carbon material. An independent claim is also included for a method for manufacturing an integrated circuit.