3-DIMENSIONALLY ALL-AROUND GATE STRUCTURAL WITH NON-VOLATILE DRAM CELL, THE METHOD OF MANUFACTURING THEREOF AND THE METHOD OF DRIVING THEREOF

摘要

A nonvolatile DRAM(Dynamic Random Access Memory) cell with a 3-dimensional all-around gate structure, and a method for manufacturing and driving the same are provided to implement DRAM without using a capacitor through a natural floating body effect and to secure an excellent short channel effect and a punchthrough effect by forming the all-around gate structure for completely enclosing the whole surface with a gate. A nonvolatile memory unit encloses the whole surface of a part that becomes a channel of a semiconductor pillar. A gate(106) encloses the nonvolatile memory unit. A source and a drain(109,110) are respectively formed on a left and a right of the channel of the semiconductor pillar. A dielectric(101) is formed on a substrate(100). The semiconductor pillar is in parallel with the dielectric. The gate is formed on the gate. The nonvolatile memory unit includes a tunneling dielectric(103), a floating gate(104), and a control dielectric(105). The tunneling dielectric encloses the whole surface of the semiconductor pillar. The floating gate encloses the tunneling dielectric. The control dielectric encloses the floating gate.