METHOD FOR REMOVING POLYMER IN SEMICONDUCTOR DEVICE

摘要

A method for removing a polymer in a semiconductor device is provided to prevent a defocus phenomenon by removing a polymer that is generated on a bevel region of a wafer rear after a dry etching is performed. A wafer(400) is cleaned so as to remove a polymer(430) formed on a bevel region(b) on a rear of the wafer. A wafer bevel etching is performed to remove the polymer residing on the bevel region of the wafer that is cleaned. After the wafer bevel etching is performed, a target layer is deposited on the wafer from which the polymer is removed. The wafer bevel etching utilizes a wet etching using a melt-solution or a dry etching. The wet etching employs the melt-solution having a temperature under 80 °C. The dry etching targets a region that is separated from a wafer edge region by 5 mm.