| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a SnO<SB>2</SB>-base sputtering target capable of obtaining a sputter film having low film specific resistance without any heating treatment while reducing abnormal discharge during the sputtering; small change in specific resistance caused by the subsequent heating treatment; and excellent heat resistance, and is excellent in deflection strength and substantially free from any condensed phase. <P>SOLUTION: The SnO<SB>2</SB>-base sputtering target comprises a sintered body containing, by mass, 1.5-3.5% of Ta<SB>2</SB>O<SB>3</SB>, 0.25-2% of Nb<SB>2</SB>O<SB>5</SB>, and the balance of SnO<SB>2</SB>with inevitable impurities. <P>COPYRIGHT: (C)2009,JPO&INPIT |
