| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composite semiconductor device being at GND (ground) potential where a capacitor is connected to the back of a semiconductor substrate 1 at low cost. <P>SOLUTION: An electrode 9 of a thin capacitor 7 is connected to the back 2 being at GND potential of a p-type semiconductor substrate 1 by a conduction type DAF8 (Die Attach Film) or a conductive adhesive, and electrodes 5, 6 on the surface 3 of the p-type semiconductor substrate 1 and terminals 13, 16 of a thin type inductor 12 are connected by bumps 19, 20 each other to be laminated, thereby the, generation of noise is suppressed, a manufacturing cost can be reduced, and a mounting area can be decreased. <P>COPYRIGHT: (C)2009,JPO&INPIT |
