| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that a crack is generated in an insulating layer surrounding the periphery of an electrode pad by a thermal stress. <P>SOLUTION: A semiconductor device 100 has a configuration flip-chip mounting a semiconductor chip 110 to a wiring board 120. The wiring board 120 has a multilayer structure laminating a plurality of wiring layers and a plurality of the insulating layers, and has the configuration laminating the insulating layers for a first layer 122, a second layer 124, a third layer 126 and a fourth layer 128. A second electrode pad 132 is formed on a boundary surface between a first insulating layer 121 and a second insulating layer 123 in a width broader in the radial direction (the plane direction) than the outside diameter of a first electrode pad 130. Since there is the second electrode pad 132 formed in the width boarder than the first electrode pad 130 between the first electrode pad 130 and a via 134, the progressive direction of the thermal stress by a reflow treatment is interrupted and the thermal stress is absorbed in the direction along the boundary surface between the first insulating layer 121 and the second insulating layer 123. <P>COPYRIGHT: (C)2009,JPO&INPIT |
