| 摘要 |
PROBLEM TO BE SOLVED: To reduce a size and on-resistance in a high frequency amplifying MOSFET having a drain offset region. SOLUTION: Conductor plugs 13 (p1) for leading out electrodes are provided on a source region 10, a drain region 9, and a leach-through layer 3 (4), respectively. First layer wiring 11s, 11d (M1) are each connected to the conductor plugs 13 (p1); and further second layer wiring 12s, 12d (M2) for backing the first layer wiring are connected to the first layer wiring 11s, 11d (M1), respectively, on the conductor plugs 13 (p1). COPYRIGHT: (C)2009,JPO&INPIT |
