| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, having an MIM capacitive element that is less apt to generate leakage current between an upper electrode and a lower electrode, and to provide its manufacturing method. SOLUTION: The semiconductor device has an upper electrode 111, a sidewall 113, and an upper-electrode dummy unit 112 on the surface of an upper electrode unit 110, opposite to a capacitive insulating film 120. An MIM capacitive element is constituted of the upper electrode 111, the capacitive insulating film 120, and a lower electrode 130. Furthermore, the device has the sidewall 113 located around the upper electrode 111, and the upper-electrode dummy unit 112 located around the sidewall 113, the upper electrode 111 is electrically insulated by the upper-electrode dummy unit 112, and at least the upper-electrode dummy unit 112 is brought into contact with the capacitive insulating film 120. COPYRIGHT: (C)2009,JPO&INPIT
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