| 摘要 |
A semiconductor structure that includes two programmable vias each of which contains a phase change material that is integrated with a heating material. In particular, the present invention provides a structure in which two programmable vias, each containing a phase change material, are located on opposing surfaces of a heating material. Each end portion of an upper surface of the heating material is connected to a metal terminal. These metal terminals, which are in contact with the end portions of the upper surface of the heating material, can be each connected to an outside component that controls and switches the resistance states of the two programmable vias. The two programmable vias of the inventive structure are each connected to another metal terminal. These metal terminals that are associated with the programmable vias can be also connected to a circuit block that may be present in the structure.
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