发明名称 |
METHOD FOR DEPOSITION OF (Al,In,Ga,B)N |
摘要 |
A method for growing an improved quality nitride thin film on a patterned substrate is disclosed, wherein the nitride film is grown at atmospheric pressure. A nitride template is disclosed, comprising a patterned substrate and a one or more nitride layer direct growth off of the patterned substrate, comprising no lateral epitaxial overgrowth regions and a substantially coalesced surface smooth enough for subsequent deposition of light emitting device quality nitride layers onto the surface. A light emitting diode comprising the nitride film is also disclosed.
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申请公布号 |
US2008251802(A1) |
申请公布日期 |
2008.10.16 |
申请号 |
US20080102612 |
申请日期 |
2008.04.14 |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
IZA MICHAEL;DENBAARS STEVEN P.;NAKAMURA SHUJI |
分类号 |
H01L21/00;H01L33/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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