METHOD FOR MANUFACTURING SEMICONDUCTOR MEMORY DEVICE, METHOD FOR REGENERATING SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR RESHIPPING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor memory device which prevents degradation of charge retention characteristic even if repeating writing and erasing of information data.

SOLUTION: The method for manufacturing the semiconductor memory device which is formed on a semiconductor substrate by a plurality of memory cells in FET structures, and stores information data by storing a unit bit in each of a plurality of the memory cells, prepares a plurality of the memory cells, writes each bit of the information data into each memory cell, leaves each memory cell for a preset time under a prescribed ambient temperature after writing each bit of the information data into each memory cell, and after that writes each bit of the information data again.

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