发明名称 MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY USING THE SAME
摘要 A magnetoresistive effect element includes a first magnetic layer, a second magnetic layer, and a first spacer layer. The first magnetic layer has an invariable magnetization direction. The second magnetic layer has a variable magnetization direction, and contains at least one element selected from Fe, Co, and Ni, at least one element selected from Ru, Rh, Pd, Ag, Re, Os, Ir, Pt, and Au, and at least one element selected from V, Cr, and Mn. The spacer layer is formed between the first magnetic layer and the second magnetic layer, and made of a nonmagnetic material. A bidirectional electric current flowing through the first magnetic layer, the spacer layer, and the second magnetic layer makes the magnetization direction of the second magnetic layer variable.
申请公布号 US2008253174(A1) 申请公布日期 2008.10.16
申请号 US20080047749 申请日期 2008.03.13
申请人 YOSHIKAWA MASATOSHI;KITAGAWA EIJI;KAI TADASHI;NAGASE TOSHIHIKO;KISHI TATSUYA;YODA HIROAKI 发明人 YOSHIKAWA MASATOSHI;KITAGAWA EIJI;KAI TADASHI;NAGASE TOSHIHIKO;KISHI TATSUYA;YODA HIROAKI
分类号 G11C11/00;H01L29/82 主分类号 G11C11/00
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