发明名称 |
SEMICONDUCTOR STRUCTURE INCLUDING TRENCH CAPACITOR AND TRENCH RESISTOR |
摘要 |
<p>A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor structure. In a first instance, the capacitor trench has a linewidth dimension narrower than the resistor trench. The trench linewidth difference provides an efficient method for fabricating the trench capacitor and the trench resistor. In a second instance, the trench resistor comprises a conductor material at a periphery of the resistor trench and a resistor material at a central portion of the resistor trench.</p> |
申请公布号 |
EP1979949(A2) |
申请公布日期 |
2008.10.15 |
申请号 |
EP20070710011 |
申请日期 |
2007.01.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG, KANGGUO;RASSEL, ROBERT, M. |
分类号 |
H01L29/94;H01L21/02;H01L21/334;H01L27/01;H01L27/06;H01L29/66;H01L49/02 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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