| 摘要 |
<p>A non-volatile memory device and a method for fabricating the same are provided to lower writing and erasing voltages for data. A non-volatile memory device comprises an isolation layer(102), a recess region(L), a gate insulating layer(108a), a floating gate(107b), a control gate electrode(109a), and a word line. The isolation layer defines an active region on a semiconductor substrate(100). The recess region is formed on the active region. The gate insulating layer is formed on the active region. The floating gate is located in the recess region. The word line includes the control gate electrode located on the floating gate and the floating gate and crosses the active region and the recess region.</p> |
