发明名称 REFLECTIVE-TYPE MASK BLANK FOR EUV LITHOGRAPHY
摘要 ABSTRACT There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate. A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.
申请公布号 KR20080092363(A) 申请公布日期 2008.10.15
申请号 KR20087016849 申请日期 2007.01.12
申请人 ASAHI GLASS COMPANY LTD. 发明人 IKUTA YOSHIAKI;UNO TOSHIYUKI;EBIHARA KEN
分类号 H01L21/027 主分类号 H01L21/027
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