Laser diode with adjustable gain spectrum

摘要

The laser has a semiconductor heterostructure including an active zone with an active quantum well (AQW), which emits laser radiation during introduction of charge carriers into the active zone, and collection quantum wells (CQW1, CQW2). The collection quantum wells collect and confine a part of the introduced charge carriers on sides of the active quantum well. The heterostructure is made from III-V or II-VI crystalline semiconductor materials whose crystalline structures are zinc blende or wurtzite type structures.