TANTAL- UND NIOB- VERBINDUNGEN UND IHRE VERWENDUNG FÜR DIE CHEMICAL VAPOUR DEPOSITION (CVD)

摘要

#CMT# #/CMT# Tantalum- (Ta) or niobium (Nb) compounds (I) are new. #CMT# : #/CMT# Tantalum- (Ta) or niobium (Nb) compounds of formula (I) are new. M : Ta or Nb; R 1>, R 2>optionally substituted 1-12C alkyl, 5-12C cycloalkyl, 6-10C aryl, 1-alkenyl, 2-alkenyl, 3-alkenyl, triorganosilyl residue (-SiR 3) or amino residue (NR 2); R : 1-4C alkyl; R 3>substituted 1-8C alkyl, 5-10C cycloalkyl, 6-14C aryl, SiR 3or NR 2; R 4>Cl, Br, I or NH-R 5>; R 5>substituted 1-8C alkyl-, 5-10C cycloalkyl, 6-10C aryl or O-R 6>; R 6>substituted 1-11C alkyl, 5-10C cycloalkyl, 6-10C aryl, -SiR 3, BH 4, indenyl residue, benzyl residue, cyclopentadienyl residue or -NRo-NRaRb (hydrazido(-1)); Ro, Ra, Rb : 1-4C alkyl, CH 2SiMe 3, pseudohalogenide (-N 3) or silylamide (-N(SiMe 3) 2); and R 7>, R 8>H, optionally substituted 1-12C alkyl, 5-12C cycloalkyl or 6-10C aryl. Independent claims are also included for: (1) a tantalum nitride layer; (2) a substrate showing tantalum nitride layer obtained from (I); (3) a niobium nitride layer; and (4) a substrate showing niobium nitride layer obtained from (I). #CMT#[Image]#/CMT# #CMT#USE : #/CMT# (I) are useful as a precursor for tantalum nitride- and niobium nitride layering by means of chemical vapor deposition (CVD) procedure (claimed). #CMT#ADVANTAGE : #/CMT# The preparation of (I) is cheap. (I) reduces the danger of unwanted C-installation into the substrate coating. (I) with stable departure group such as cyclopentadienyl or boranate promotes the reduction of carbon-installation in CVD. (I) influences the oxidation of Ta-III and/or Ta-V compounds and its Nb-analog. (I) in combination with hydrazine derivative provides an aimed variation of the layer composition in the CVD. (I) with 1,4-diaza-butadiene-ligand as CVD suitable group of outlet for TA-III or Nb-III-layers reduces the danger of an unwanted carbon-installation into the substrate coating. #CMT#ORGANIC CHEMISTRY : #/CMT# Preparation: No general methods for the preparation of (I) are given. #CMT#DEFINITIONS : #/CMT# Preferred Definitions: M : Ta; R 7>, R 8>H; R 1>, R 2>-C(CH 3) 3; R 3>-C(CH 3) 3, diisopropyl-benzene or pentafluoro-benzene; and R 4>e.g. -C(CH 3) 3, diisopropyl-benzene, pentafluoro-benzene, Cl, -CH 2-phenyl, cyclopenta-1,3-diene, allyl or -O-C(CH 3) 3. #CMT#SPECIFIC COMPOUNDS : #/CMT# 7 compounds are specifically claimed as (I), e.g. compound of formula (Ia) or (Ib). #CMT#EXAMPLE : #/CMT# Li 2(1,4-di-tert.butyl-1,4-diaza-butadiene) (1.76 g) in tetrahydrofuran (THF) (20 ml) was added to a solution of tert.butylimino=tantalum trichloride.2 pyridine (5 g) in THF (20 ml) at -80[deg]C. After 30 minutes, the reaction mixture was heated to 23[deg]C and stirred. The reaction mixture was worked up to give (1,4-di-tert.butyl-1,4-diaza-butadiene)(tert.butylimino)tantalum chloride as pyridine-complex (2.75 g).