Semiconductor optical device and manufacturing method thereof

摘要

In a p-type clad layer, not only a p-type dopant Zn but also Fe is doped. Its Zn concentration is 1.5 × 10 18 cm -3 and the Fe concentration is 1.8 × 10 17 cm -3 . In a semi-insulating burying layer, Fe is doped as an impurity generating a deep acceptor level and the concentration thereof is 6.0 × 10 16 cm -3 . The Fe concentration in the p-type clad layer is thus three times higher than the Fe concentration in the burying layer.