PROCESS FOR PRODUCING SOI WAFER

摘要

In a manufacturing method for manufacturing an SOI wafer, a single crystal silicon whose entire surface is an N region on an outer side of an OSF region, is grown using a Czochralski method and sliced to fabricate an N region single crystal silicon; an ion injection layer is formed within the N region single crystal silicon wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the N region single crystal silicon wafer; the ion injection surface of the N region single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone; the ion injection surface of the N region single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s); and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer.