| 摘要 |
PURPOSE:To find the depth of an impurity layer and the concentration distribution of the impurity by observing and measuring the natural spectrum of the impurity by the secondary emission when a light atom is irradiated on a semiconductor on which the impurity is formed by ion implantation. CONSTITUTION:H or He 12 is irradiated on a semiconductor substrate sample 11 having an impurity layer to be measured by ion implantation technic. When a wafer is of Si and the impurity of boron, the secondary emission by the irradiation of hydrogen provides a proper specrum. The position is measured on the natural spectrum for Si and B beforehand. Then, the natural spectrum B is observed varying the irradiation energy and a vanishing point, if any, indicates the end of the impurity layer. Observation of the secular change clarifies the concentration distribution of boron in the impurity layer. From this, the depth of the impurity layer and the concentration distribution are measure for the feedback to the process of impurity layer formation. |
