MANUFACTURE OF MAGNETOELECTRIC TRANSDUCER

摘要

PURPOSE:To obtain a magnetoelectric transducer having stable characteristics by performing an ion implantation under the limited conditions to readily form ohmic electrodes. CONSTITUTION:To manufacture a magnetoelectric transducer formed by implanting impurity ions to a semi-insulating GaAs crystal and then annealing it to form a conductive layer, the ion implantations are carried out more than twice by controlling at least ion acceleration energy and dosage so that the peak carrier density is more than 1X10<17>cm<-3> and the peak carrier density is formed at the position of 0.05-0.15mum from the surface.