| 摘要 |
PURPOSE:To enable semiconductor layer to be evenly adhered to only a window of an insulating layer, by a method wherein, through evaporation of a semiconductor layer on an insulating layer resulting from the heating due to a light irradiation, the semiconductor layer is caused to selectively remain in only a window in the insulating layer. CONSTITUTION:An insulating layer 2 is formed on a surface of a Si substrate 1, and a window is provided in a part thereof. Impurity is poured into the substrate 1 through the window 2a to form a base region 3. A thin insulating layer 2' is then formed so that it blockades the window 2a, a window 2b is bored in a part thereof, and a multicrystal semiconductor layer 4, whereon impurity is doped in a high concentration, is adhered to the layers 2' and 2 so that it blocks the inside of the window 2b. The layer 4 is then irradiated with laser light. This causes only a part, over the layers 2 and 2', of the layer 4 to be partially increased in temperature, whereby only the layer 4 at said part is selectively evaporated for removal, and only a part, directly adhered to the region 3 through the window 2b, remains. This causes adhering of the layer 4, which finally remains as an emitter electrode, to be evenly adhered to only the window 2b and to prevent from stretching over the layers 2 and 2'. |
