| 摘要 |
PURPOSE:To prevent stacking fault of an Si wafer by a method wherein after the wafer is treated at 1,000 deg.C or lower in an inert gas atmosphere being added with a very small quantity of trichloroethylene, oxidation is performed. CONSTITUTION:An Si wafer is heat treated for a short time at 1,000 deg.C or lower in the inert gas of Ar, etc., being added with a very small quantity of C2HCl3 and moreover being added with O2 sometime. When normal oxidation is performed , the interface is considered as the generating source of interstitial Si, but when heat treatment being added with Cl of C2HCl3 is performed, the interstitial Si at the neighborhood of the interface is caught by Cl to decrease the excess interstitial Si sharply forming SiO2, or forming chlorosiloxane when O2 is insufficient, and the more the temperature and adding quantity of Cl are increased, the more quantity of chlorine to be accumulated at the neighborhood of the interface is increased to intensify action as the absorbing source of the interstitial Si, and gettering of the cause f stacking fault is performed to suppress generation of stacking fault. When O2 is introduced in C2HCl3 of a very small quantity, chapping of the surface os substrate can be prevented, and the treatment can be completed in a short time at a low temperature. |
