Process for making silicon carbide composites and composites thus obtained.

摘要

Process for making sintered silicon carbide composites containing diamond crystals at desired surface locations. The process comprises: (a) forming a first dispersion of diamond crystals and carbon black in paraffin; (b) forming a second dispersion of carbon fiber, carbon black and filler in paraffin; (c) compacting one of said dispersions to produce a physically stable intermediate compact; (d) recompacting said intermediate with the remaining dispersion to produce a binary compact; (e) subjecting said binary compact to a vacuum for a period of time at a temperature sufficient to vaporize essentially all of said paraffin; (f) infiltrating said binary compact with liquid silicon, and (g) sintering the binary compact containing infiltrated silicon under conditions sufficient to produce a beta -silicon carbide binder uniting the resultant composite. These composites may be formed in a variety of specialized shapes and a particularly useful as cutting materials and/or wear components, where they exhibit extreme wear resistance.