| 摘要 |
The present invention relates to electrical fuses that each comprises at least one thin film transistor. In one embodiment, the electrical fuse of the present invention comprises a hydrogenated thin film transistor with an adjacent heating element. Programming of such an electrical fuse can be effectuated by heating the hydrogenated thin film transistor so as to cause at least partial dehydrogenation. Consequentially, the thin film transistor exhibits detectible physical property change(s), which defines a programmed state. In an alternative embodiment of the present invention, the electrical fuse comprises a thin film transistor that is either hydrogenated or not hydrogenated. Programming of such an alternative electrical fuse can be effectuated by applying a sufficient high back gate voltage to the thin film transistor to cause state changes in the channel-gate interface. In this manner, the thin film transistor also exhibits detectible property change(s) to define a programmed state.
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