发明名称 |
Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET |
摘要 |
Multiple integration schemes for manufacturing dual gate semiconductor structures are disclosed. By employing the novel integration schemes, polysilicon gate MOSFETs and high-k dielectric metal gate MOSFETs are formed on the same semiconductor substrate despite differences in the composition of the gate stack and resulting differences in the etch rates. A thin polysilicon layer is used for one type of gate electrodes and a silicon-containing layer are used for the other type of gate electrodes in these integration schemes to balance the different etch rates and to enable etching of the two different gate stacks.
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申请公布号 |
US7435652(B1) |
申请公布日期 |
2008.10.14 |
申请号 |
US20070694104 |
申请日期 |
2007.03.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN TZE-CHIANG;DORIS BRUCE B.;JAGANNATHAN RANGARAJAN;YAN HONGWEN;YANG QINGYUN;ZHANG YING |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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