发明名称 |
Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier |
摘要 |
An ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.
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申请公布号 |
US7436041(B2) |
申请公布日期 |
2008.10.14 |
申请号 |
US20050306212 |
申请日期 |
2005.12.20 |
申请人 |
NATIONAL CHIAO TUNG UNIVERSITY |
发明人 |
KER MING-DOU;HSU KUO-CHUN |
分类号 |
H01L23/58;H01L27/02;H01L29/74 |
主分类号 |
H01L23/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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