| 摘要 |
A method of the present invention of manufacturing a semiconductor memory device provided with a capacitor over a semiconductor substrate, which has a lamination of a lower electrode made of a first conductive film, a capacitor dielectric film made of a dielectric film, and an upper electrode made of a second conductive film, comprises the steps of forming an insulating film, forming a capacitor on the insulating film, forming a dielectric monitor that is made of same material and has a same layer structure as the capacitor on the insulating film, measuring characteristics of the dielectric monitor in middle of a step of forming the capacitor, and evaluating the capacitor based on measured results of the characteristics of the dielectric monitor. |
