发明名称 |
Methods of trench and contact formation in memory cells |
摘要 |
Methods of contact formation and memory arrays formed using such methods, which methods include providing a memory array having a plurality of bit lines disposed below a surface of a semiconductor substrate and a plurality of word lines disposed above the surface of the substrate and transverse to the bit lines; forming a hard mask material layer over the plurality of word lines, wherein an area above at least one of the bit lines and between two consecutive word lines is exposed below an opening in the hard mask material layer; forming an insulating material layer above the hard mask material layer; forming a contiguous trench and via pattern in the insulating material layer above the area such that a portion of the at least one bit line is exposed below the pattern; and forming an interconnection comprising a conductive material disposed in the contiguous trench and via pattern wherein the interconnection is in conductive contact with the exposed portion of the at least one bit line.
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申请公布号 |
US7435648(B2) |
申请公布日期 |
2008.10.14 |
申请号 |
US20060459990 |
申请日期 |
2006.07.26 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
HSU MIAO CHIH;HAN TZUNG TING;CHEN MING SHANG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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