发明名称 Phase change memory cell with junction selector and manufacturing method thereof
摘要 A memory cell includes a memory element and a selection element coupled to the memory element. The selection element includes a first junction portion, having a first type of conductivity, and a second junction portion, having a second type of conductivity and forming a rectifying junction with the first junction portion. The first junction portion and the second junction portion are made of materials selected in the group consisting of: chalcogenides and conducting polymers.
申请公布号 US7436692(B2) 申请公布日期 2008.10.14
申请号 US20050312253 申请日期 2005.12.19
申请人 PELLIZZER FABIO;PIROVANO AGOSTINO 发明人 PELLIZZER FABIO;PIROVANO AGOSTINO
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
主权项
地址