| 摘要 |
A multi-chip build-up package of an optoelectronic chip mainly includes a metal carrier, an IC chip, an optoelectronic chip, a build-up packaging structure including a plurality of dielectric layers and a plurality of wiring layers, and a transparent conductive substrate. The IC chip is disposed on the metal carrier and is covered by one of the dielectric layers, and a plurality of electrodes of the IC chip is electrically connected to the wiring layers. The optoelectronic chip is partially embedded in one of the dielectric layers such that an optoelectronic working region and a plurality of electrodes of the optoelectronic chip are exposed. The transparent conductive substrate is disposed on the dielectric layers and the optoelectronic chip, and the wiring layers electrically connect the optoelectronic chip and the IC chip. Accordingly, the embedded IC chip and optoelectronic chip can be electrically interconnected together in build-up process.
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